Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate
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چکیده
منابع مشابه
Wafer bonding of gallium arsenide on sapphire
Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...
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ژورنال
عنوان ژورنال: Advances in Condensed Matter Physics
سال: 2013
ISSN: 1687-8108,1687-8124
DOI: 10.1155/2013/465498